IXDD430MCI
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-5 |
| Weight | 2.299997g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2005 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Power Dissipation | 2W |
| Voltage - Supply | 8.5V~35V |
| Peak Reflow Temperature (Cel) | 260 |
| Number of Functions | 1 |
| Supply Voltage | 18V |
| Time@Peak Reflow Temperature-Max (s) | 35 |
| Base Part Number | IXD*430 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T5 |
| Qualification Status | Not Qualified |
| Operating Supply Voltage | 35V |
| Nominal Supply Current | 3mA |
| Output Current | 30A |
| Input Type | Non-Inverting |
| Rise Time | 20ns |
| Fall Time (Typ) | 18 ns |
| Rise / Fall Time (Typ) | 18ns 16ns |
| Interface IC Type | BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER |
| Channel Type | Single |
| Number of Drivers | 1 |
| Turn On Time | 0.045 µs |
| Output Peak Current Limit-Nom | 30A |
| Driven Configuration | Low-Side |
| Gate Type | IGBT, N-Channel, P-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 30A 30A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.8V 3.5V |
| Turn Off Time | 0.039 µs |
| RoHS Status | RoHS Compliant |
IXDD430MCI Overview
In order to increase flexibility, the package TO-220-5 is used.Gate drivers is packaged in the way of Bulk.Gate drivers incorporates wGate driversh 1 drivers for Gate driverss configuration.Ideally, it should be mounted in the direction of Through Hole.When the supply voltage is set to 8.5V~35V, it can demonstrate its superiority.Gate type IGBT, N-Channel, P-Channel MOSFET has been used in its design.Temperature range -55°C~150°C TJ is allowed for this device.This program uses the input type of Non-Inverting.5 terminations constitute its foundation.Under its base part number IXD*430, various related parts can be found.The device is mounted using Through Hole.In order to operate, a voltage of 18V has to be applied.In this case, BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER serves as the interface IC.On the board, there are 3 component pins.The output current can be set to 30A.Its maximum power dissipation of 2W also demonstrates its maximum ability to transfer power without overheating.A voltage of 35V should be set for the operating supply voltage.
IXDD430MCI Features
Embedded in the Bulk package
1 drivers
Employing a gate type of IGBT, N-Channel, P-Channel MOSFET
Maximum power dissipation of 2W
IXDD430MCI Applications
There are a lot of IXYS IXDD430MCI gate drivers applications.
- Broadcast equipment
- Dual-Battery Systems
- Portable Navigation Devices
- Refrigerator
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Smart Phones
- 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
- Active filtering
- Isolated switch mode power supplies (SMPS)
- High frequency line drivers
