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IXDH30N120D1

IXDH Series 1200 Vce 60 A 100 ns t(on) High Voltage IGBT - TO-247AD


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXDH30N120D1
  • Package: TO-3P-3 Full Pack
  • Datasheet: PDF
  • Stock: 642
  • Description: IXDH Series 1200 Vce 60 A 100 ns t(on) High Voltage IGBT - TO-247AD (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW SWITCHING LOSSES
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXD*30N120
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 300W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 100 ns
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 500 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 60A
Reverse Recovery Time 40ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.4V
Turn On Time 170 ns
Test Condition 600V, 30A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 30A
Turn Off Time-Nom (toff) 570 ns
IGBT Type NPT
Gate Charge 120nC
Current - Collector Pulsed (Icm) 76A
Switching Energy 4.6mJ (on), 3.4mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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