IXDN430MCI
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-5 |
| Weight | 2.299997g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2005 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Power Dissipation | 2W |
| Voltage - Supply | 8.5V~35V |
| Peak Reflow Temperature (Cel) | 260 |
| Number of Functions | 1 |
| Supply Voltage | 18V |
| Time@Peak Reflow Temperature-Max (s) | 35 |
| Base Part Number | IXD*430 |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T5 |
| Qualification Status | Not Qualified |
| Operating Supply Voltage | 35V |
| Nominal Supply Current | 3mA |
| Output Current | 30A |
| Input Type | Non-Inverting |
| Rise Time | 20ns |
| Fall Time (Typ) | 18 ns |
| Rise / Fall Time (Typ) | 18ns 16ns |
| Interface IC Type | BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER |
| Channel Type | Single |
| Number of Drivers | 1 |
| Turn On Time | 0.045 µs |
| Output Peak Current Limit-Nom | 30A |
| Driven Configuration | Low-Side |
| Gate Type | IGBT, N-Channel, P-Channel MOSFET |
| Current - Peak Output (Source, Sink) | 30A 30A |
| High Side Driver | YES |
| Logic Voltage - VIL, VIH | 0.8V 3.5V |
| Turn Off Time | 0.039 µs |
| RoHS Status | RoHS Compliant |
IXDN430MCI Overview
In order to increase flexibility, the package TO-220-5 is used.Bulk is the packaging method.Configuration is based on 1 drivers.It's mounted on the way to Through Hole.Gate drivers is able to show Gate driverss superiorGate driversy on the basis of a supply voltage of 8.5V~35V.A gate type of IGBT, N-Channel, P-Channel MOSFET is used in its design.In this device, temperatures must not exceed -55°C~150°C TJ.Input type of Non-Inverting is used.Mosfet driver is based on 5 terminations.There are various related parts under its base part number IXD*430.The device is mounted with Through Hole.With a supply voltage of 18V, it is designed to operate.The interface IC is referred to as BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER.A total of 3 pins are available for component connections.The output current of this device can be set to 30A.Considering its maximum power dissipation, 2W shows its maximum capacity to transfer and conduct power loss without overheating.A voltage of 35V should be set for the operating supply voltage.
IXDN430MCI Features
Embedded in the Bulk package
1 drivers
Employing a gate type of IGBT, N-Channel, P-Channel MOSFET
Maximum power dissipation of 2W
IXDN430MCI Applications
There are a lot of IXYS IXDN430MCI gate drivers applications.
- Video amplifiers
- Digitally controlled power supplies
- High current laser/LED systems
- A/D drivers
- Motor Drives
- PCMCIA applications
- serial peripheral interface (SPI), I2C
- Power factor correction (PFC) circuits
- Motor controllers
- 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
