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IXDN75N120

IGBT MOD 1200V 150A 660W SOT227B


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXDN75N120
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 883
  • Description: IGBT MOD 1200V 150A 660W SOT227B (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2000
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Nickel (Ni)
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 660W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 660W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 150A
Current - Collector Cutoff (Max) 4mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.2V
Input Capacitance 5.5nF
Turn On Time 150 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 75A
Turn Off Time-Nom (toff) 700 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 5.5nF @ 25V
VCEsat-Max 2.7 V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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