IXDR30N120D1
| Parameters | |
|---|---|
| Turn On Time | 170 ns |
| Test Condition | 600V, 30A, 47 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 570 ns |
| IGBT Type | NPT |
| Gate Charge | 120nC |
| Current - Collector Pulsed (Icm) | 60A |
| Switching Energy | 4.6mJ (on), 3.4mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | ISOPLUS247™ |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 200W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IXD*30N120 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 200W |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Rise Time | 70ns |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 50A |
| Reverse Recovery Time | 40ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.4V |
See Relate Datesheet
