IXEH40N120D1
| Parameters | |
|---|---|
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.4V |
| Turn On Time | 135 ns |
| Test Condition | 600V, 40A, 39 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 40A |
| Turn Off Time-Nom (toff) | 490 ns |
| IGBT Type | NPT |
| Gate Charge | 150nC |
| Switching Energy | 6.1mJ (on), 3mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| RoHS Status | RoHS Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3 Full Pack |
| Weight | 6.500007g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 300W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 300W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 3V |
| Max Collector Current | 60A |
| Reverse Recovery Time | 180 ns |
| JEDEC-95 Code | TO-247AD |
See Relate Datesheet
