Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | ISOPLUSi5-Pak™ |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tube |
Published | 2012 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Additional Feature | UL RECOGNIZED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 380W |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | ISOLATED |
Input Type | Standard |
Transistor Application | GENERAL PURPOSE SWITCHING |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 4kV |
Max Collector Current | 40A |
Collector Emitter Breakdown Voltage | 4kV |
Voltage - Collector Emitter Breakdown (Max) | 4000V |
Current - Collector (Ic) (Max) | 90A |
Collector Emitter Saturation Voltage | 3V |
Turn On Time | 260 ns |
Test Condition | 2800V, 40A, 33 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 40A |
Turn Off Time-Nom (toff) | 1170 ns |
Gate Charge | 275nC |
Current - Collector Pulsed (Icm) | 400A |
Td (on/off) @ 25°C | 160ns/630ns |
Switching Energy | 55mJ (on), 165mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 7V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |