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IXEN60N120D1

IGBT MOD 1200V 100A 445W SOT227B


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXEN60N120D1
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 839
  • Description: IGBT MOD 1200V 100A 445W SOT227B (Kg)

Details

Tags

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Nickel (Ni)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 445W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Turn On Delay Time 80 ns
Power - Max 445W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Turn-Off Delay Time 680 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 100A
Current - Collector Cutoff (Max) 800μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.1V
Input Capacitance 3.8nF
Turn On Time 130 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 60A
Turn Off Time-Nom (toff) 710 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.8nF @ 25V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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