IXER60N120
| Parameters | |
|---|---|
| Gate-Emitter Thr Voltage-Max | 6.5V |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | ISOPLUS247™ |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| JESD-609 Code | e1 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 375W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 375W |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Rise Time | 50ns |
| Collector Emitter Voltage (VCEO) | 2.7V |
| Max Collector Current | 95A |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.1V |
| Turn On Time | 130 ns |
| Test Condition | 600V, 60A, 22 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 60A |
| Turn Off Time-Nom (toff) | 710 ns |
| IGBT Type | NPT |
| Gate Charge | 350nC |
| Switching Energy | 7.2mJ (on), 4.8mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
See Relate Datesheet
