banner_page

IXFA26N50P3

MOSFET N-Channel: Power MOSFET w/Fast Diode


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXFA26N50P3
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 741
  • Description: MOSFET N-Channel: Power MOSFET w/Fast Diode (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series HiPerFET™, Polar3™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Number of Elements 1
Power Dissipation-Max 500W Tc
Power Dissipation 500W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 230m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 2220pF @ 25V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 26A
Gate to Source Voltage (Vgs) 30V
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good