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IXFB170N30P

MOSFET N-CH TO-264


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXFB170N30P
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 838
  • Description: MOSFET N-CH TO-264 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series HiPerFET™, PolarP2™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1250W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 85A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 20000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170A Tc
Gate Charge (Qg) (Max) @ Vgs 258nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 170A
Drain-source On Resistance-Max 0.018Ohm
Pulsed Drain Current-Max (IDM) 500A
DS Breakdown Voltage-Min 300V
Avalanche Energy Rating (Eas) 5000 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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