IXFH20N80Q
| Parameters | |
|---|---|
| Power Dissipation | 360W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 420m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
| Rise Time | 27ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 14 ns |
| Turn-Off Delay Time | 74 ns |
| Reverse Recovery Time | 250 ns |
| Continuous Drain Current (ID) | 20A |
| Threshold Voltage | 4.5V |
| JEDEC-95 Code | TO-247AD |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 800V |
| Pulsed Drain Current-Max (IDM) | 80A |
| Dual Supply Voltage | 800V |
| Avalanche Energy Rating (Eas) | 1500 mJ |
| Nominal Vgs | 4.5 V |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2002 |
| Series | HiPerFET™ |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 420mOhm |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 800V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 20A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 360W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
See Relate Datesheet
