Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2011 |
Series | HiPerFET™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | Not Applicable |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 80MOhm |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 300V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 40A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 300W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 300W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 80m Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 4mA |
Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 40A Tc |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
Rise Time | 35ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 12 ns |
Turn-Off Delay Time | 40 ns |
Continuous Drain Current (ID) | 40A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 300V |
Pulsed Drain Current-Max (IDM) | 160A |
Avalanche Energy Rating (Eas) | 1000 mJ |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |