IXFH60N50P3
| Parameters | |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1040W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.04kW |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds | 6250pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
| Rise Time | 16ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 37 ns |
| Continuous Drain Current (ID) | 60A |
| Threshold Voltage | 5V |
| JEDEC-95 Code | TO-247AD |
| Factory Lead Time | 1 Week |
| Gate to Source Voltage (Vgs) | 30V |
| Mount | Through Hole |
| Drain to Source Breakdown Voltage | 500V |
| Mounting Type | Through Hole |
| Height | 21.46mm |
| Package / Case | TO-247-3 |
| Length | 16.26mm |
| Number of Pins | 3 |
| Width | 5.3mm |
| Radiation Hardening | No |
| Transistor Element Material | SILICON |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Operating Temperature | -55°C~150°C TJ |
| Lead Free | Lead Free |
| Packaging | Tube |
| Published | 2012 |
| Series | HiPerFET™, Polar3™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
See Relate Datesheet
