IXFH80N65X2
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2015 |
| Series | HiPerFET™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 890W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 40m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds | 8245pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 143nC @ 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Continuous Drain Current (ID) | 80A |
| Drain-source On Resistance-Max | 0.038Ohm |
| Pulsed Drain Current-Max (IDM) | 160A |
| DS Breakdown Voltage-Min | 650V |
| Avalanche Energy Rating (Eas) | 3000 mJ |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
