Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Packaging | Tube |
Published | 2011 |
Series | GigaMOS™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 1670W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.67kW |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7.5m Ω @ 60A, 10V |
Vgs(th) (Max) @ Id | 5V @ 8mA |
Input Capacitance (Ciss) (Max) @ Vds | 28000pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 230A Tc |
Gate Charge (Qg) (Max) @ Vgs | 378nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 230A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0075Ohm |
Drain to Source Breakdown Voltage | 200V |
Pulsed Drain Current-Max (IDM) | 630A |
Avalanche Energy Rating (Eas) | 3000 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |