Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2008 |
Series | HiPerFET™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | Not Applicable |
Number of Terminations | 3 |
Resistance | 390MOhm |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 1kV |
Technology | MOSFET (Metal Oxide) |
Current Rating | 24A |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 560W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 560W |
Case Connection | DRAIN |
Turn On Delay Time | 35 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 390m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 8mA |
Input Capacitance (Ciss) (Max) @ Vds | 8700pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 24A Tc |
Gate Charge (Qg) (Max) @ Vgs | 267nC @ 10V |
Rise Time | 35ns |
Drain to Source Voltage (Vdss) | 1000V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 21 ns |
Turn-Off Delay Time | 75 ns |
Continuous Drain Current (ID) | 24A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 1kV |
Pulsed Drain Current-Max (IDM) | 96A |
Height | 26.16mm |
Length | 19.96mm |
Width | 5.13mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |