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IXFL210N30P3

MOSFET N-Channel: Power MOSFET w/Fast Diode


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXFL210N30P3
  • Package: ISOPLUS264™
  • Datasheet: PDF
  • Stock: 418
  • Description: MOSFET N-Channel: Power MOSFET w/Fast Diode (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS264™
Number of Pins 264
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HiPerFET™, Polar3™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Power Dissipation-Max 520W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 46 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16m Ω @ 105A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 16200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 108A Tc
Gate Charge (Qg) (Max) @ Vgs 268nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) 108A
Gate to Source Voltage (Vgs) 20V
Height 26.42mm
Length 20.29mm
Width 5.31mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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