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IXFN130N30

MOSFET N-CH 300V 130A SOT-227B


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXFN130N30
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 492
  • Description: MOSFET N-CH 300V 130A SOT-227B (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Weight 36mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFET™
Pbfree Code yes
Part Status Obsolete
Number of Terminations 4
Termination Screw
ECCN Code EAR99
Resistance 22mOhm
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 300V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 130A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 700W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 700W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 14500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Rise Time 75ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 130 ns
Reverse Recovery Time 250 ns
Continuous Drain Current (ID) 130A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 300V
Pulsed Drain Current-Max (IDM) 520A
Dual Supply Voltage 300V
Nominal Vgs 4 V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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