Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC |
Number of Pins | 4 |
Weight | 42g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2002 |
Series | HiPerFET™ |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Termination | Screw |
ECCN Code | EAR99 |
Resistance | 8MOhm |
Terminal Finish | Nickel (Ni) |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 600W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 600W |
Case Connection | ISOLATED |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8m Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 8mA |
Input Capacitance (Ciss) (Max) @ Vds | 9100pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 180A Tc |
Gate Charge (Qg) (Max) @ Vgs | 360nC @ 10V |
Rise Time | 90ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 65 ns |
Turn-Off Delay Time | 140 ns |
Continuous Drain Current (ID) | 180A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 100V |
Pulsed Drain Current-Max (IDM) | 720A |
Dual Supply Voltage | 100V |
Avalanche Energy Rating (Eas) | 3000 mJ |
Recovery Time | 250 ns |
Isolation Voltage | 2.5kV |
Nominal Vgs | 4 V |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |