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IXFN180N20

MOSFET N-CH 200V 180A SOT-227B


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXFN180N20
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 962
  • Description: MOSFET N-CH 200V 180A SOT-227B (Kg)

Details

Tags

Parameters
Isolation Voltage 2.5kV
Nominal Vgs 4 V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 3
Weight 46g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series HiPerFET™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4
Termination Screw
ECCN Code EAR99
Resistance 10MOhm
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 180A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PUFM-X4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 700W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 700W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 22000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 660nC @ 10V
Rise Time 85ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 180 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 720A
Dual Supply Voltage 200V
Avalanche Energy Rating (Eas) 4000 mJ
See Relate Datesheet

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