Parameters | |
---|---|
Isolation Voltage | 2.5kV |
Nominal Vgs | 4 V |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC |
Number of Pins | 3 |
Weight | 46g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2000 |
Series | HiPerFET™ |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | Not Applicable |
Number of Terminations | 4 |
Termination | Screw |
ECCN Code | EAR99 |
Resistance | 10MOhm |
Terminal Finish | Nickel (Ni) |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 200V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 180A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
JESD-30 Code | R-PUFM-X4 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 700W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 700W |
Case Connection | ISOLATED |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 10m Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 8mA |
Input Capacitance (Ciss) (Max) @ Vds | 22000pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 180A Tc |
Gate Charge (Qg) (Max) @ Vgs | 660nC @ 10V |
Rise Time | 85ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 56 ns |
Turn-Off Delay Time | 180 ns |
Continuous Drain Current (ID) | 180A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 200V |
Pulsed Drain Current-Max (IDM) | 720A |
Dual Supply Voltage | 200V |
Avalanche Energy Rating (Eas) | 4000 mJ |