Parameters | |
---|---|
Series | GigaMOS™ |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Nickel (Ni) |
Additional Feature | UL RECOGNIZED, AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
JESD-30 Code | R-PUFM-X4 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1090W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | ISOLATED |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7.5m Ω @ 60A, 10V |
Vgs(th) (Max) @ Id | 5V @ 8mA |
Input Capacitance (Ciss) (Max) @ Vds | 28000pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 220A Tc |
Gate Charge (Qg) (Max) @ Vgs | 378nC @ 10V |
Drain to Source Voltage (Vdss) | 200V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 220A |
Drain-source On Resistance-Max | 0.0075Ohm |
Pulsed Drain Current-Max (IDM) | 630A |
DS Breakdown Voltage-Min | 200V |
Avalanche Energy Rating (Eas) | 3000 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Chassis Mount |
Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2007 |