banner_page

IXFN240N15T2

MOSFET N-CH 150V 240A SOT227


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXFN240N15T2
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 206
  • Description: MOSFET N-CH 150V 240A SOT227 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series GigaMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish NICKEL
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PUFM-X4
Number of Outputs 1
Qualification Status Not Qualified
Output Voltage 150V
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 830W Tc
Nominal Supply Current 120A
Operating Mode ENHANCEMENT MODE
Power Dissipation 830W
Output Current 240A
Case Connection ISOLATED
Turn On Delay Time 48 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 32000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 460nC @ 10V
Rise Time 125ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 145 ns
Turn-Off Delay Time 77 ns
Continuous Drain Current (ID) 240A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0052Ohm
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 600A
Avalanche Energy Rating (Eas) 2000 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good