IXFN360N10T
| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Series | HiPerFET™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 2.6MOhm |
| Terminal Finish | NICKEL |
| Additional Feature | AVALANCHE RATED, UL RECOGNIZED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 830W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 830W |
| Case Connection | ISOLATED |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.6m Ω @ 180A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 36000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 360A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 505nC @ 10V |
| Rise Time | 100ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 160 ns |
| Turn-Off Delay Time | 80 ns |
| Continuous Drain Current (ID) | 360A |
| Gate to Source Voltage (Vgs) | 20V |
| Pulsed Drain Current-Max (IDM) | 900A |
| Avalanche Energy Rating (Eas) | 2000 mJ |
| Radiation Hardening | No |
See Relate Datesheet
