Parameters | |
---|---|
Power Dissipation-Max | 1070W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | ISOLATED |
Factory Lead Time | 1 Week |
FET Type | N-Channel |
Mount | Chassis Mount |
Transistor Application | SWITCHING |
Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC |
Number of Pins | 4 |
Rds On (Max) @ Id, Vgs | 2.3m Ω @ 60A, 10V |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Vgs(th) (Max) @ Id | 5V @ 8mA |
Published | 2009 |
Input Capacitance (Ciss) (Max) @ Vds | 47000pF @ 25V |
Series | GigaMOS™ HiPerFET™ |
Pbfree Code | yes |
Current - Continuous Drain (Id) @ 25°C | 420A Tc |
Part Status | Active |
Gate Charge (Qg) (Max) @ Vgs | 670nC @ 10V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Drain to Source Voltage (Vdss) | 100V |
Number of Terminations | 4 |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
ECCN Code | EAR99 |
Vgs (Max) | ±20V |
Terminal Finish | Nickel (Ni) |
Additional Feature | AVALANCHE RATED, UL RECOGNIZED |
Continuous Drain Current (ID) | 420A |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Drain-source On Resistance-Max | 0.0023Ohm |
Pulsed Drain Current-Max (IDM) | 1000A |
Terminal Position | UPPER |
DS Breakdown Voltage-Min | 100V |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Avalanche Energy Rating (Eas) | 5000 mJ |
RoHS Status | ROHS3 Compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Lead Free | Lead Free |
Pin Count | 4 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |