Parameters | |
---|---|
Input Capacitance (Ciss) (Max) @ Vds | 8800pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 20A Tc |
Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
Rise Time | 24ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 24 ns |
Turn-Off Delay Time | 85 ns |
Continuous Drain Current (ID) | 20A |
Gate to Source Voltage (Vgs) | 30V |
Drain-source On Resistance-Max | 0.29Ohm |
Drain to Source Breakdown Voltage | 800V |
Pulsed Drain Current-Max (IDM) | 70A |
Avalanche Energy Rating (Eas) | 1500 mJ |
Height | 21.34mm |
Length | 16.13mm |
Width | 5.21mm |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | ISOPLUS247™ |
Number of Pins | 247 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2006 |
Series | HiPerFET™, PolarHT™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 300W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 300W |
Case Connection | ISOLATED |
Turn On Delay Time | 30 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 290m Ω @ 16A, 10V |
Vgs(th) (Max) @ Id | 5V @ 8mA |