banner_page

IXFR32N80P

In a Tube of 30, N-Channel MOSFET, 20 A, 800 V, 3-Pin ISOPLUS247 IXYS IXFR32N80P


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXFR32N80P
  • Package: ISOPLUS247™
  • Datasheet: PDF
  • Stock: 222
  • Description: In a Tube of 30, N-Channel MOSFET, 20 A, 800 V, 3-Pin ISOPLUS247 IXYS IXFR32N80P (Kg)

Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.29Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 1500 mJ
Height 21.34mm
Length 16.13mm
Width 5.21mm
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 247
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series HiPerFET™, PolarHT™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection ISOLATED
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 290m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good