Parameters | |
---|---|
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Current - Continuous Drain (Id) @ 25°C | 24A Tc |
Published | 2008 |
Series | HiPerFET™, PolarP2™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Rise Time | 40ns |
Number of Terminations | 2 |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
ECCN Code | EAR99 |
Vgs (Max) | ±30V |
Terminal Finish | Matte Tin (Sn) |
Fall Time (Typ) | 38 ns |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Turn-Off Delay Time | 68 ns |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Continuous Drain Current (ID) | 24A |
Reach Compliance Code | unknown |
Threshold Voltage | 3.5V |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
Gate to Source Voltage (Vgs) | 30V |
JESD-30 Code | R-PSSO-G2 |
Drain-source On Resistance-Max | 0.42Ohm |
Qualification Status | Not Qualified |
Drain to Source Breakdown Voltage | 900V |
Number of Elements | 1 |
Pulsed Drain Current-Max (IDM) | 48A |
Power Dissipation-Max | 660W Tc |
Avalanche Energy Rating (Eas) | 1000 mJ |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Nominal Vgs | 3.5 V |
Power Dissipation | 660W |
REACH SVHC | No SVHC |
Case Connection | DRAIN |
RoHS Status | ROHS3 Compliant |
FET Type | N-Channel |
Factory Lead Time | 1 Week |
Transistor Application | SWITCHING |
Mount | Surface Mount |
Rds On (Max) @ Id, Vgs | 420m Ω @ 12A, 10V |
Mounting Type | Surface Mount |
Vgs(th) (Max) @ Id | 6.5V @ 1mA |
Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Number of Pins | 3 |
Input Capacitance (Ciss) (Max) @ Vds | 7200pF @ 25V |