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IXFX360N15T2

Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXFX360N15T2
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 650
  • Description: Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET (Kg)

Details

Tags

Parameters
Continuous Drain Current (ID) 360A
Qualification Status Not Qualified
Drain-source On Resistance-Max 0.004Ohm
Output Voltage 150V
Pulsed Drain Current-Max (IDM) 900A
Number of Elements 1
Number of Drivers 1
Configuration SINGLE WITH BUILT-IN DIODE
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Lead Free Lead Free
Mount Through Hole
Power Dissipation-Max 1670W Tc
Mounting Type Through Hole
Package / Case TO-247-3
Nominal Supply Current 100A
Number of Pins 247
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Operating Mode ENHANCEMENT MODE
Packaging Tube
Published 2009
Output Current 360A
Series GigaMOS™
JESD-609 Code e1
Case Connection DRAIN
Pbfree Code yes
Part Status Active
Turn On Delay Time 50 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
FET Type N-Channel
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Transistor Application SWITCHING
Subcategory FET General Purpose Power
Rds On (Max) @ Id, Vgs 4m Ω @ 60A, 10V
Technology MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id 5V @ 8mA
Terminal Position SINGLE
Input Capacitance (Ciss) (Max) @ Vds 47500pF @ 25V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C 360A Tc
Reach Compliance Code unknown
Gate Charge (Qg) (Max) @ Vgs 715nC @ 10V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Rise Time 170ns
JESD-30 Code R-PSIP-T3
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 265 ns
Turn-Off Delay Time 115 ns
See Relate Datesheet

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