IXFX55N50
| Parameters | |
|---|---|
| Max Junction Temperature (Tj) | 150°C |
| Package / Case | TO-247-3 |
| Height | 25.66mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2002 |
| Series | HiPerFET™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Number of Terminations | 3 |
| Resistance | 80MOhm |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 500V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 55A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 625W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 520W |
| Case Connection | DRAIN |
| Turn On Delay Time | 45 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 80m Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds | 9400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 55A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 330nC @ 10V |
| Rise Time | 60ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Factory Lead Time | 1 Week |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 45 ns |
| Mount | Through Hole |
| Turn-Off Delay Time | 120 ns |
| Continuous Drain Current (ID) | 55A |
| Threshold Voltage | 4.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 500V |
| Mounting Type | Through Hole |
| Pulsed Drain Current-Max (IDM) | 220A |
See Relate Datesheet
