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IXGA20N100

Trans IGBT Chip N-CH 1KV 40A 3-Pin(2+Tab) TO-263AA


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGA20N100
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 853
  • Description: Trans IGBT Chip N-CH 1KV 40A 3-Pin(2+Tab) TO-263AA (Kg)

Details

Tags

Parameters
Test Condition 800V, 20A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Turn Off Time-Nom (toff) 1220 ns
IGBT Type PT
Gate Charge 73nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 30ns/350ns
Switching Energy 3.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 700ns
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.59999g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*20N100
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 30 ns
Power - Max 150W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 350 ns
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 40A
Collector Emitter Breakdown Voltage 1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Saturation Voltage 3V
Turn On Time 60 ns
See Relate Datesheet

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