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IXGA20N120B3

Trans IGBT Chip N-CH 1.2KV 36A 3-Pin(2+Tab) TO-263


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGA20N120B3
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 741
  • Description: Trans IGBT Chip N-CH 1.2KV 36A 3-Pin(2+Tab) TO-263 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish PURE TIN
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 180W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 180W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.1V
Max Collector Current 36A
JEDEC-95 Code TO-263AA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 61 ns
Test Condition 600V, 16A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 16A
Turn Off Time-Nom (toff) 720 ns
IGBT Type PT
Gate Charge 51nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 16ns/150ns
Switching Energy 920μJ (on), 560μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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