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IXGA30N60C3C1

IGBT 600V 60A 220W TO263


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGA30N60C3C1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 999
  • Description: IGBT 600V 60A 220W TO263 (Kg)

Details

Tags

Parameters
Power Dissipation 220W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 60A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.6V
Turn On Time 37 ns
Test Condition 300V, 20A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Turn Off Time-Nom (toff) 160 ns
IGBT Type PT
Gate Charge 38nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 17ns/42ns
Switching Energy 120μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.59999g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish PURE TIN
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 220W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*30N60
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
See Relate Datesheet

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