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IXGA48N60B3

IGBT 600V 300W TO263AA


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGA48N60B3
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 596
  • Description: IGBT 600V 300W TO263AA (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.59999g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish PURE TIN
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*48N60
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 280A
Collector Emitter Breakdown Voltage 600V
Turn On Time 44 ns
Test Condition 480V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 32A
Turn Off Time-Nom (toff) 347 ns
IGBT Type PT
Gate Charge 115nC
Td (on/off) @ 25°C 22ns/130ns
Switching Energy 840μJ (on), 660μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 200ns
RoHS Status ROHS3 Compliant
See Relate Datesheet

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