IXGB200N60B3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | GenX3™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 1.25kW |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IXG*200N60 |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.25kW |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 1250W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.5V |
| Max Collector Current | 75A |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.35V |
| Turn On Time | 122 ns |
| Test Condition | 300V, 100A, 1 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 100A |
| Turn Off Time-Nom (toff) | 730 ns |
| IGBT Type | PT |
| Gate Charge | 750nC |
| Current - Collector Pulsed (Icm) | 600A |
| Td (on/off) @ 25°C | 44ns/310ns |
| Switching Energy | 1.6mJ (on), 2.9mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Fall Time-Max (tf) | 300ns |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
