IXGE200N60B
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | ISOPLUS227™ |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Published | 2004 |
| Series | HiPerFAST™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 416W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Base Part Number | IXG*200N60 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | Single |
| Case Connection | ISOLATED |
| Power - Max | 416W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 160A |
| Current - Collector Cutoff (Max) | 200μA |
| Collector Emitter Breakdown Voltage | 600V |
| Input Capacitance | 11nF |
| Turn On Time | 120 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 120A |
| Turn Off Time-Nom (toff) | 540 ns |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 11nF @ 25V |
| VCEsat-Max | 2.1 V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
