Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1997 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | Not Applicable |
Number of Terminations | 3 |
Additional Feature | HIGH SPEED |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 1kV |
Max Power Dissipation | 100W |
Terminal Position | SINGLE |
Current Rating | 20A |
Base Part Number | IXG*10N100 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 4V |
Max Collector Current | 20A |
Reverse Recovery Time | 60ns |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 1kV |
Voltage - Collector Emitter Breakdown (Max) | 1000V |
Turn On Time | 300 ns |
Test Condition | 800V, 10A, 150 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 10A |
Turn Off Time-Nom (toff) | 1200 ns |
Gate Charge | 52nC |
Current - Collector Pulsed (Icm) | 40A |
Td (on/off) @ 25°C | 100ns/550ns |
Switching Energy | 2mJ (off) |
Gate-Emitter Voltage-Max | 20V |
VCEsat-Max | 4 V |
Gate-Emitter Thr Voltage-Max | 5.5V |
RoHS Status | RoHS Compliant |