IXGH10N100U1
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1997 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 3 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 1kV |
| Max Power Dissipation | 100W |
| Terminal Position | SINGLE |
| Current Rating | 20A |
| Base Part Number | IXG*10N100 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 3.5V |
| Max Collector Current | 20A |
| Reverse Recovery Time | 60ns |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 1kV |
| Voltage - Collector Emitter Breakdown (Max) | 1000V |
| Turn On Time | 300 ns |
| Test Condition | 800V, 10A, 150 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 10A |
| Turn Off Time-Nom (toff) | 1850 ns |
| Gate Charge | 52nC |
| Current - Collector Pulsed (Icm) | 40A |
| Td (on/off) @ 25°C | 100ns/550ns |
| Switching Energy | 2mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.5V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
