Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2000 |
Series | Lightspeed™ |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Additional Feature | LOW SWITCHING LOSSES |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 150W |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | IXG*15N120 |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 150W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 3.8V |
Max Collector Current | 30A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Turn On Time | 43 ns |
Test Condition | 960V, 15A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.8V @ 15V, 15A |
Turn Off Time-Nom (toff) | 470 ns |
Gate Charge | 69nC |
Current - Collector Pulsed (Icm) | 60A |
Td (on/off) @ 25°C | 25ns/150ns |
Switching Energy | 1.05mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
Fall Time-Max (tf) | 190ns |
RoHS Status | RoHS Compliant |