IXGH16N170
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.500007g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 190W |
| Terminal Form | GULL WING |
| Base Part Number | IXG*16N170 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 190W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 45 ns |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 200 ns |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Max Collector Current | 32A |
| JEDEC-95 Code | TO-268AA |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Voltage - Collector Emitter Breakdown (Max) | 1700V |
| Collector Emitter Saturation Voltage | 2.7V |
| Turn On Time | 90 ns |
| Test Condition | 1360V, 16A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 16A |
| Turn Off Time-Nom (toff) | 1600 ns |
| IGBT Type | NPT |
| Gate Charge | 78nC |
| Current - Collector Pulsed (Icm) | 80A |
| Td (on/off) @ 25°C | 45ns/400ns |
| Switching Energy | 9.3mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Fall Time-Max (tf) | 1100ns |
| Height | 21.46mm |
| Length | 16.26mm |
| Width | 5.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
