Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Weight | 6.500007g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2010 |
Series | HiPerFAST™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 150W |
Base Part Number | IXG*16N60 |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 25 ns |
Power - Max | 150W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 60 ns |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 40A |
Reverse Recovery Time | 30 ns |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 43 ns |
Test Condition | 400V, 12A, 22 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 12A |
Turn Off Time-Nom (toff) | 190 ns |
IGBT Type | PT |
Gate Charge | 25nC |
Current - Collector Pulsed (Icm) | 100A |
Td (on/off) @ 25°C | 16ns/75ns |
Switching Energy | 160μJ (on), 90μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.5V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |