IXGH20N60A
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.500007g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1997 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Additional Feature | HIGH SPEED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 150W |
| Base Part Number | IXG*20N60 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 150W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 40A |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 300 ns |
| Test Condition | 480V, 20A, 82 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 1150 ns |
| Gate Charge | 100nC |
| Current - Collector Pulsed (Icm) | 80A |
| Td (on/off) @ 25°C | 100ns/600ns |
| Switching Energy | 1.5mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| VCEsat-Max | 3 V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Fall Time-Max (tf) | 200ns |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
