Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Weight | 6.500007g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2008 |
Series | GenX3™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | AVALANCHE RATED |
Max Power Dissipation | 250W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | IXG*24N120 |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 250W |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 48A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 3.6V |
Input Capacitance | 1.9nF |
Turn On Time | 41 ns |
Test Condition | 600V, 20A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 4.2V @ 15V, 20A |
Turn Off Time-Nom (toff) | 430 ns |
IGBT Type | PT |
Gate Charge | 79nC |
Current - Collector Pulsed (Icm) | 96A |
Td (on/off) @ 25°C | 16ns/93ns |
Switching Energy | 1.16mJ (on), 470μJ (off) |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |