Parameters | |
---|---|
Power - Max | 250W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.7kV |
Max Collector Current | 24A |
Reverse Recovery Time | 200 ns |
Collector Emitter Breakdown Voltage | 1.7kV |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Collector Emitter Saturation Voltage | 6V |
Input Capacitance | 2.86nF |
Turn On Time | 54 ns |
Test Condition | 850V, 24A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 16A |
Turn Off Time-Nom (toff) | 456 ns |
IGBT Type | NPT |
Gate Charge | 140nC |
Current - Collector Pulsed (Icm) | 75A |
Td (on/off) @ 25°C | 21ns/336ns |
Switching Energy | 2.97mJ (on), 790μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5V |
Fall Time-Max (tf) | 80ns |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2009 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 250W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | IXG*24N170 |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |