IXGH25N120A
| Parameters | |
|---|---|
| Gate-Emitter Voltage-Max | 20V |
| VCEsat-Max | 4 V |
| Gate-Emitter Thr Voltage-Max | 6V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1997 |
| JESD-609 Code | e1 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | HIGH SPEED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 200W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 200W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 50A |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Turn On Time | 350 ns |
| Test Condition | 960V, 25A, 33 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 25A |
| Turn Off Time-Nom (toff) | 1520 ns |
| Gate Charge | 130nC |
| Current - Collector Pulsed (Icm) | 100A |
| Td (on/off) @ 25°C | 100ns/650ns |
| Switching Energy | 11mJ (off) |
See Relate Datesheet
