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IXGH28N90B

IGBT 900V 51A 200W TO247AD


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGH28N90B
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 553
  • Description: IGBT 900V 51A 200W TO247AD (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series HiPerFAST™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 51A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 900V
Turn On Time 65 ns
Test Condition 720V, 28A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 28A
Turn Off Time-Nom (toff) 470 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 30ns/100ns
Switching Energy 1.2mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 220ns
RoHS Status ROHS3 Compliant
See Relate Datesheet

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