Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Transistor Element Material | SILICON |
Packaging | Tube |
Published | 1997 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Additional Feature | HIGH SPEED |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 200W |
Base Part Number | IXG*30N60 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Operating Temperature (Max) | 150°C |
Number of Elements | 1 |
Rise Time-Max | 200ns |
Element Configuration | Single |
Power Dissipation | 200W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 100 ns |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 500 ns |
Collector Emitter Voltage (VCEO) | 3V |
Max Collector Current | 50A |
Continuous Drain Current (ID) | 60A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 600V |
Drain to Source Breakdown Voltage | 600V |
Turn On Time | 300 ns |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 30A |
Drain to Source Resistance | 2.6Ohm |
Turn Off Time-Nom (toff) | 850 ns |
Gate-Emitter Voltage-Max | 30V |
VCEsat-Max | 3 V |
Gate-Emitter Thr Voltage-Max | 5V |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |