IXGH31N60
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.500007g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2000 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 150W |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 15 ns |
| Power - Max | 150W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 400 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 60A |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 40 ns |
| Test Condition | 480V, 31A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 31A |
| Turn Off Time-Nom (toff) | 1600 ns |
| Gate Charge | 80nC |
| Current - Collector Pulsed (Icm) | 80A |
| Td (on/off) @ 25°C | 15ns/400ns |
| Switching Energy | 6mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| VCEsat-Max | 1.8 V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Fall Time-Max (tf) | 1100ns |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
