IXGH36N60B3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Series | GenX3™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 250W |
| Terminal Position | SINGLE |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 250W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.8V |
| Max Collector Current | 92A |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 45 ns |
| Test Condition | 400V, 30A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 350 ns |
| IGBT Type | PT |
| Gate Charge | 80nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | 19ns/125ns |
| Switching Energy | 540μJ (on), 800μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Fall Time-Max (tf) | 160ns |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
