Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1997 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 200W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 200W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 76A |
JEDEC-95 Code | TO-247AD |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 200 ns |
Test Condition | 480V, 38A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 38A |
Turn Off Time-Nom (toff) | 1800 ns |
Gate Charge | 125nC |
Current - Collector Pulsed (Icm) | 152A |
Td (on/off) @ 25°C | 30ns/600ns |
Switching Energy | 9mJ (off) |
Gate-Emitter Voltage-Max | 20V |
VCEsat-Max | 1.8 V |
Gate-Emitter Thr Voltage-Max | 5V |
Fall Time-Max (tf) | 1100ns |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |