Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Weight | 6.500007g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2009 |
Series | GenX3™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 300W |
Base Part Number | IXG*48N60 |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 300W |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 75A |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.3V |
Input Capacitance | 1.96nF |
Turn On Time | 45 ns |
Test Condition | 400V, 30A, 3 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
Turn Off Time-Nom (toff) | 187 ns |
IGBT Type | PT |
Gate Charge | 77nC |
Current - Collector Pulsed (Icm) | 250A |
Td (on/off) @ 25°C | 19ns/60ns |
Switching Energy | 410μJ (on), 230μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.5V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |